上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQP5N20LMOSFET N-CH 200V 4.5A TO220-3 Fairchild Semiconductor |
5,950 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.5A (Tc) | 5V, 10V | 1.2Ohm @ 2.25A, 10V | 2V @ 250µA | 6.2 nC @ 5 V | ±20V | 325 pF @ 25 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP3N25MOSFET N-CH 250V 2.8A TO220-3 Fairchild Semiconductor |
5,900 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.8A (Tc) | 10V | 2.2Ohm @ 1.4A, 10V | 5V @ 250µA | 5.2 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQPF7N10LMOSFET N-CH 100V 5.5A TO220F Fairchild Semiconductor |
5,887 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.5A (Tc) | 5V, 10V | 350mOhm @ 2.75A, 10V | 2V @ 250µA | 6 nC @ 5 V | ±20V | 290 pF @ 25 V | - | 23W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUF76013P3MOSFET N-CH 20V 20A TO220-3 Fairchild Semiconductor |
5,326 | - |
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规格书 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Tc) | 5V, 10V | 22mOhm @ 20A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 624 pF @ 20 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP9N08LMOSFET N-CH 80V 9.3A TO220-3 Fairchild Semiconductor |
5,169 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.3A (Tc) | 5V, 10V | 210mOhm @ 4.65A, 10V | 5V @ 250µA | 6.1 nC @ 5 V | ±20V | 280 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRFU330BTUN-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,090 | - |
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规格书 |
- | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 4.5A (Tc) | 10V | 1Ohm @ 2.25A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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FQP9N08MOSFET N-CH 80V 9.3A TO220-3 Fairchild Semiconductor |
3,153 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.3A (Tc) | 10V | 210mOhm @ 4.65A, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±25V | 250 pF @ 25 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP4N25MOSFET N-CH 250V 3.6A TO220-3 Fairchild Semiconductor |
2,950 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.6A (Tc) | 10V | 1.75Ohm @ 1.8A, 10V | 5V @ 250µA | 5.6 nC @ 10 V | ±30V | 200 pF @ 25 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDU6676ASMOSFET N-CH 30V 90A IPAK Fairchild Semiconductor |
1,708 | - |
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规格书 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Ta) | 4.5V, 10V | 5.8mOhm @ 16A, 10V | 3V @ 250µA | 64 nC @ 10 V | ±20V | 2470 pF @ 15 V | - | 70W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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HUF75309D3SMOSFET N-CH 55V 19A DPAK Fairchild Semiconductor |
1,687 | - |
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规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | - | 70mOhm @ 19A, 10V | 4V @ 250µA | 24 nC @ 20 V | ±20V | 350 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
