上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFW720BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,600 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.3A (Tc) | 10V | 1.75Ohm @ 1.65A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 3.13W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SFR9224TMP-CHANNEL POWER MOSFET Fairchild Semiconductor |
307,692 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.5A (Tc) | 10V | 2.4Ohm @ 1.3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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SFU9224TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
273,525 | - |
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规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.5A (Tc) | 10V | 2.4Ohm @ 1.3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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SFR9224TFP-CHANNEL POWER MOSFET Fairchild Semiconductor |
167,865 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.5A (Tc) | 10V | 2.4Ohm @ 1.3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
HUF76013D3STMOSFET N-CH 20V 20A TO252AA Fairchild Semiconductor |
150,700 | - |
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规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Tc) | 5V, 10V | 22mOhm @ 20A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 624 pF @ 20 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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NDS352PMOSFET P-CH 20V 850MA SUPERSOT3 Fairchild Semiconductor |
28,035 | - |
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规格书 |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 850mA (Ta) | 4.5V, 10V | 350mOhm @ 1A, 10V | 2.5V @ 250µA | 4 nC @ 5 V | ±12V | 125 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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HUFA76419P3MOSFET N-CH 60V 29A TO220-3 Fairchild Semiconductor |
14,432 | - |
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规格书 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±16V | 900 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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HUFA76413D3STMOSFET N-CH 60V 20A TO252AA Fairchild Semiconductor |
9,843 | - |
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规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 49mOhm @ 20A, 10V | 3V @ 250µA | 20 nC @ 10 V | ±16V | 645 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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IRFW530ATMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,166 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 110mOhm @ 7A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 3.8W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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SFW9520TMP-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,994 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 3.8W (Ta), 49W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
