制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
RFP8P10P-CHANNEL POWER MOSFET Fairchild Semiconductor |
29,973 | - |
|
![]() 规格书 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 400mOhm @ 8A, 10V | 4V @ 250µA | - | ±20V | 1500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
![]() |
SFR9120TMP-CHANNEL POWER MOSFET Fairchild Semiconductor |
27,709 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 4.9A (Tc) | 10V | 600mOhm @ 2.5A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
![]() |
FDFMA2P859TMOSFET P-CH 20V 3A MICROFET Fairchild Semiconductor |
14,392 | - |
|
![]() 规格书 |
PowerTrench® | 6-UDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | ±8V | 435 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MicroFET 2x2 Thin |
![]() |
FDFMA2P853TMOSFET P-CH 20V 3A MICROFET Fairchild Semiconductor |
13,740 | - |
|
![]() 规格书 |
PowerTrench® | 6-VDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | ±8V | 435 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
![]() |
FDD6780MOSFET N-CH 25V 16.5A/30A DPAK Fairchild Semiconductor |
12,410 | - |
|
![]() 规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 16.5A (Ta), 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.5A, 10V | 3V @ 250µA | 29 nC @ 10 V | ±20V | 1590 pF @ 13 V | - | 3.7W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
![]() |
HUF76009D3STMOSFET N-CH 20V 20A TO252AA Fairchild Semiconductor |
11,609 | - |
|
![]() 规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Tc) | 5V, 10V | 27mOhm @ 20A, 10V | 3V @ 250µA | 13 nC @ 10 V | ±20V | 470 pF @ 20 V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
![]() |
IRFS830BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
11,242 | - |
|
![]() 规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tj) | 10V | 1.5Ohm @ 2.25A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 38W (Tj) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDMB668PMOSFET P-CH 20V 6.1A 8MLP Fairchild Semiconductor |
10,643 | - |
|
![]() 规格书 |
PowerTrench® | 8-PowerWDFN | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.1A (Ta) | 1.8V, 4.5V | 35mOhm @ 6.1A, 4.5V | 1V @ 250µA | 59 nC @ 10 V | ±8V | 2085 pF @ 10 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP, MicroFET (3x1.9) |
![]() |
HUF75617D3MOSFET N-CH 100V 16A IPAK Fairchild Semiconductor |
5,072 | - |
|
![]() 规格书 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 90mOhm @ 16A, 10V | 4V @ 250µA | 39 nC @ 20 V | ±20V | 570 pF @ 25 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
![]() |
IRFU430BTUN-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,040 | - |
|
![]() 规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.75A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |