上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFR210BTFN-CHANNEL POWER MOSFET Fairchild Semiconductor |
218,000 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.7A (Tc) | 10V | 1.5Ohm @ 1.35A, 10V | 4V @ 250µA | 9.3 nC @ 10 V | ±30V | 225 pF @ 25 V | - | 2.5W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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SSR1N60BTFN-CHANNEL POWER MOSFET Fairchild Semiconductor |
76,000 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDZ293PMOSFET P-CH 20V 4.6A 9BGA Fairchild Semiconductor |
48,430 | - |
|
规格书 |
PowerTrench® | 9-VFBGA | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.6A (Ta) | 2.5V, 4.5V | 46mOhm @ 4.6A, 4.5V | 1.5V @ 250µA | 11 nC @ 4.5 V | ±12V | 754 pF @ 10 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-BGA (1.5x1.6) |
|
FQD4N25TMMOSFET N-CH 250V 3A DPAK Fairchild Semiconductor |
22,500 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3A (Tc) | 10V | 1.75Ohm @ 1.5A, 10V | 5V @ 250µA | 5.6 nC @ 10 V | ±30V | 200 pF @ 25 V | - | 2.5W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDS6630AMOSFET N-CH 30V 6.5A 8SOIC Fairchild Semiconductor |
21,486 | - |
|
规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 38mOhm @ 6.5A, 10V | 3V @ 250µA | 7 nC @ 5 V | ±20V | 460 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FQE10N20CTUMOSFET N-CH 200V 4A TO126-3 Fairchild Semiconductor |
17,700 | - |
|
规格书 |
QFET® | TO-225AA, TO-126-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 4A (Tc) | 10V | 360mOhm @ 2A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 12.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-126-3 |
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FDMS0306S1-ELEMENT, N-CHANNEL Fairchild Semiconductor |
12,000 | - |
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- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SFU9034TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,477 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 140mOhm @ 7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±25V | 1155 pF @ 25 V | - | 2.5W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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IRFR430BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
207,739 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.75A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDS9412MOSFET N-CH 30V 7.9A 8SOIC Fairchild Semiconductor |
113,738 | - |
|
规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.9A (Ta) | 4.5V, 10V | 22mOhm @ 7.9A, 10V | 2V @ 250µA | 22 nC @ 10 V | ±20V | 830 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
