上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDP39N20POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
500 | - |
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规格书 |
UniFET™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 39A (Tc) | 10V | 66mOhm @ 19.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 2130 pF @ 25 V | - | 251W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDP8441POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
14,407 | - |
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规格书 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 80A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 4V @ 250µA | 280 nC @ 10 V | ±20V | 15000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDZ375PMOSFET P-CH 20V 3.7A 4WLCSP Fairchild Semiconductor |
4,885 | - |
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规格书 |
PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 1.5V, 4.5V | 78mOhm @ 2A, 4.5V | 1.2V @ 250µA | 15 nC @ 4.5 V | ±8V | 865 pF @ 10 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-WLCSP (1x1) |
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FCP260N60EPOWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor |
1,000 | - |
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规格书 |
SuperFET® II | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 260mOhm @ 7.5A, 10V | 3.5V @ 250µA | 62 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FCP9N60NMOSFET N-CH 600V 9A TO220-3 Fairchild Semiconductor |
25,380 | - |
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规格书 |
SuperMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 1240 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FCPF11N60POWER MOSFET, N-CHANNEL, SUPERFE Fairchild Semiconductor |
461 | - |
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规格书 |
SuperFET™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1490 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUF75542P3POWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
1,690 | - |
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规格书 |
UltraFET™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 20 V | ±20V | 2750 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FCP11N60NPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
800 | - |
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规格书 |
SupreMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.8A (Tc) | 10V | 299mOhm @ 5.4A, 10V | 4V @ 250µA | 35.6 nC @ 10 V | ±30V | 1505 pF @ 100 V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDA18N50POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
1,564 | - |
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规格书 |
UniFET™ | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 265mOhm @ 9.5A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±30V | 2860 pF @ 25 V | - | 239W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
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FQP12N60CPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
4,340 | - |
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规格书 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±30V | 2290 pF @ 25 V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
