上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDPF44N25TRDTUMOSFET N-CH 250V 44A TO220F Fairchild Semiconductor |
800 | - |
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规格书 |
UniFET™ | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 69mOhm @ 22A, 10V | 5V @ 250µA | 61 nC @ 10 V | ±30V | 2870 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F (LG-Formed) |
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FQB27N25TM-F085FQB27N25 - N-CHANNEL ULTRAFET 25 Fairchild Semiconductor |
5,600 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 131mOhm @ 25.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
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FDI9406-F085FDI9406 - N-CHANNEL POWERTRENCH Fairchild Semiconductor |
5,600 | - |
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规格书 |
PowerTrench® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | ±20V | 7710 pF @ 25 V | - | 176W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | I2PAK (TO-262) |
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FDPF16N50UTMOSFET N-CH 500V 15A TO220F Fairchild Semiconductor |
373 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQPF10N50CFPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
67,211 | - |
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规格书 |
FRFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 610mOhm @ 5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2096 pF @ 25 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FCPF165N65S3R0LFCPF165N65S3R0L - POWER MOSFET, Fairchild Semiconductor |
11,630 | - |
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规格书 |
SuperFET® III | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 410µA | 35 nC @ 10 V | ±30V | 1415 pF @ 400 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FDP8442-F085POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
750 | - |
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规格书 |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 80A (Tc) | 10V | 3.1mOhm @ 80A, 10V | 4V @ 250µA | 235 nC @ 10 V | ±20V | 12200 pF @ 25 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-220-3 |
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FCPF9N60NTPOWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
1,700 | - |
|
规格书 |
SuperMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 1240 pF @ 100 V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FCP380N60EMOSFET N-CH 600V 10.2A TO220-3 Fairchild Semiconductor |
25,166 | - |
|
规格书 |
SuperFET® II | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQI13N50CTUPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
13,185 | - |
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规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
