上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FCU850N80ZPOWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor |
1,000 | - |
|
规格书 |
SuperFET® II | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | ±20V | 1315 pF @ 100 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
FQI8N60CTUPOWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
6,000 | - |
|
规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.5A (Tc) | 10V | 1.2Ohm @ 3.75A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1255 pF @ 25 V | - | 3.13W (Ta), 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
|
FQI4N90TUPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
1,502 | - |
|
规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.2A (Tc) | 10V | 3.3Ohm @ 2.1A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
|
HUFA75433S3ST64A, 60V, 0.016OHM, N-CHANNEL MO Fairchild Semiconductor |
520 | - |
|
规格书 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 64A (Tc) | 10V | 16mOhm @ 64A, 10V | 4V @ 250µA | 117 nC @ 20 V | ±20V | 1550 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FDD6688MOSFET N-CH 30V 84A DPAK Fairchild Semiconductor |
131,976 | - |
|
规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 84A (Ta) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 3845 pF @ 15 V | - | 83W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FQPF7N80CPOWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor |
1,000 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.6A (Tc) | 10V | 1.9Ohm @ 3.3A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 1680 pF @ 25 V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQPF8N80CYDTUMOSFET N-CH 800V 8A TO220F-3 Fairchild Semiconductor |
417 | - |
|
规格书 |
- | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 1.55Ohm @ 4A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2050 pF @ 25 V | - | 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
|
|
FCPF260N65FL1MOSFET N-CH 650V 15A TO220F Fairchild Semiconductor |
2,000 | - |
|
规格书 |
FRFET®, SuperFET® II | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 260mOhm @ 7.5A, 10V | 5V @ 1.5mA | 60 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
|
FQPF6N80TMOSFET N-CH 800V 3.3A TO220F Fairchild Semiconductor |
3,715 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.3A (Tc) | 10V | 1.95Ohm @ 1.65A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQPF8N90CPOWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor |
2,796 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2080 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
