制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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FQP3N80CPOWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
40,533 | - |
|
![]() 规格书 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 5V @ 250µA | 16.5 nC @ 10 V | ±30V | 705 pF @ 25 V | - | 107W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQPF5N50CYDTUPOWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor |
34,463 | - |
|
![]() 规格书 |
QFET® | TO-220-3 Full Pack, Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
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FDPF18N20FT-GMOSFET N-CH 200V 18A TO220F Fairchild Semiconductor |
1,246 | - |
|
![]() 规格书 |
UniFET™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 140mOhm @ 9A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FDC697P8A, 20V, 0.02OHM, P-CHANNEL MOSF Fairchild Semiconductor |
69,811 | - |
|
![]() 规格书 |
PowerTrench® | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Ta) | 1.8V, 4.5V | 20mOhm @ 8A, 4.5V | 1.5V @ 250µA | 55 nC @ 4.5 V | ±8V | 3524 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 FLMP |
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FCD900N60ZPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
1,213 | - |
|
![]() 规格书 |
SuperFET® II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | ±20V | 720 pF @ 25 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQB6N40CTMMOSFET N-CH 400V 6A D2PAK Fairchild Semiconductor |
2,400 | - |
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![]() 规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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NDS8425SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
60,029 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 7.4A (Ta) | 2.7V, 4.5V | 22mOhm @ 7.4A, 4.5V | 1.5V @ 250µA | 18 nC @ 4.5 V | ±8V | 1098 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDPF5N50NZPOWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
412,929 | - |
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![]() 规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FQP6N60CPOWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor |
20,356 | - |
|
![]() 规格书 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.5A (Tc) | 10V | 2Ohm @ 2.75A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDPF5N50NZFMOSFET N-CH 500V 4.2A TO220F Fairchild Semiconductor |
551,340 | - |
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![]() 规格书 |
UniFET-II™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.2A (Tc) | 10V | 1.75Ohm @ 2.1A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |