制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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R6038YNZ4C13600V 38A TO-247, HIGH-SPEED SWIT Rohm Semiconductor |
569 | - |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tj) | 10V, 12V | 96mOhm @ 9A, 12V | 6V @ 2.5mA | 50 nC @ 10 V | ±30V | 2350 pF @ 100 V | - | 348W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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RX3G18BBGC16NCH 40V 180A, TO-220AB, POWER MO Rohm Semiconductor |
937 | - |
|
![]() 规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 1.47mOhm @ 90A, 10V | 2.5V @ 1mA | 210 nC @ 10 V | ±20V | 13200 pF @ 20 V | - | 192W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SCT3160KW7HRTL1200V, 17A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor |
1,990 | - |
|
![]() 规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7L |
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SCT3160KWATL1200V, 17A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor |
1,000 | - |
|
![]() 规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tj) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | - | 175°C (TJ) | - | - | Surface Mount | TO-263-7LA |
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RX3R10BBHC16NCH 150V 105A, TO-220AB, POWER M Rohm Semiconductor |
988 | - |
|
![]() 规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 6V, 10V | 8.8mOhm @ 50A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 7550 pF @ 75 V | - | 181W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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R6086YNZC17NCH 600V 33A, TO-3PF, POWER MOSF Rohm Semiconductor |
300 | - |
|
![]() 规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V, 12V | 44mOhm @ 17A, 12V | 6V @ 4.6mA | 110 nC @ 10 V | ±30V | 5100 pF @ 100 V | - | 114W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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SCT3160KWAHRTL1200V, 17A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor |
1,000 | - |
|
![]() 规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7LA |
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SCT3105KRC151200V, 24A, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
370 | - |
|
![]() 规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tj) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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SCT3105KRHRC151200V, 24A, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
440 | - |
|
![]() 规格书 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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SCT3080ARC15650V, 30A, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
439 | - |
|
![]() 规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tj) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48 nC @ 18 V | +22V, -4V | 571 pF @ 500 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |