制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SCT3080KRC151200V, 31A, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
365 | - |
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![]() 规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tj) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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SCT4026DWATL750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor |
946 | - |
|
![]() 规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | - | 175°C (TJ) | - | - | Surface Mount | TO-263-7LA |
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SCT4026DWAHRTL750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor |
980 | - |
|
![]() 规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7LA |
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SCT3030ARC15650V, 70A, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
386 | - |
|
![]() 规格书 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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SCT3030ARHRC15650V, 70A, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
448 | - |
|
![]() 规格书 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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SCT3040KRC151200V, 55A, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
370 | - |
|
![]() 规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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SCT3040KRHRC151200V, 55A, 4-PIN THD, TRENCH-ST Rohm Semiconductor |
395 | - |
|
![]() 规格书 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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RW1E014SNT2RMOSFET N-CH 30V 1.4A WEMT6 Rohm Semiconductor |
7,791 | - |
|
![]() 规格书 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 1.4A, 10V | 2.5V @ 1mA | 1.4 nC @ 5 V | ±20V | 70 pF @ 10 V | - | 400mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-WEMT |
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RW1A025APT2CRMOSFET P-CH 12V 2.5A WEMT6 Rohm Semiconductor |
2,465 | - |
|
![]() 规格书 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 2.5A (Ta) | 1.5V, 4.5V | 62mOhm @ 2.5A, 4.5V | 1V @ 1mA | 16 nC @ 4.5 V | -8V | 2000 pF @ 6 V | - | 400mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-WEMT |
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US5U38TRMOSFET P-CH 20V 1A TUMT5 Rohm Semiconductor |
2,706 | - |
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* | - | Tape & Reel (TR) | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |