上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6010YNXC7G600V 7A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor |
983 | - |
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规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V, 12V | 390mOhm @ 4.2A, 12V | 6V @ 1.2mA | 15 nC @ 10 V | ±30V | 600 pF @ 100 V | - | 47W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6027YNX3C16NCH 600V 27A, TO-220AB, POWER MO Rohm Semiconductor |
980 | - |
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规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V, 12V | 135mOhm @ 7A, 12V | 6V @ 2mA | 40 nC @ 10 V | ±30V | 1670 pF @ 100 V | - | 245W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RS1N110ATTB1PCH -80V -43A, HSOP8, POWER MOSF Rohm Semiconductor |
2,500 | - |
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规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 11A (Ta), 43A (Tc) | 6V, 10V | 21mOhm @ 11A, 10V | 4V @ 1mA | 135 nC @ 10 V | ±20V | 5800 pF @ 40 V | - | 3W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
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R6022YNXC7GNCH 600V 13A, TO-220FM, POWER MO Rohm Semiconductor |
1,000 | - |
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规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V, 12V | 165mOhm @ 6.5A, 12V | 6V @ 1.8mA | 33 nC @ 10 V | ±30V | 1400 pF @ 100 V | - | 65W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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RS3P070ATTB1PCH -100V -7A POWER MOSFET: RS3P Rohm Semiconductor |
2,763 | - |
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规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 7A (Ta) | 4.5V, 10V | 36mOhm @ 7A, 10V | 2.5V @ 1mA | 115 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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R6020YNZ4C13NCH 600V 20A, TO-247, POWER MOSF Rohm Semiconductor |
563 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V, 12V | 185mOhm @ 6A, 12V | 6V @ 1.65mA | 28 nC @ 10 V | ±30V | 1200 pF @ 100 V | - | 182W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6010YNX3C16600V 10A TO-220AB, HIGH-SPEED SW Rohm Semiconductor |
1,000 | - |
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规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V, 12V | 390mOhm @ 4.2A, 12V | 6V @ 1.2mA | 15 nC @ 10 V | ±30V | 600 pF @ 100 V | - | 92W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RD3G08BBJHRBTLPCH -40V -80A, TO-252 (DPAK), PO Rohm Semiconductor |
2,396 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Ta) | 4.5V, 10V | 4.9mOhm @ 80A, 10V | 2.5V @ 1mA | 145 nC @ 10 V | +5V, -20V | 7350 pF @ 20 V | - | 142W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 |
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RCJ200N20TLMOSFET N-CH 200V 20A LPTS Rohm Semiconductor |
976 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 20A (Tc) | 10V | 130mOhm @ 10A, 10V | 5V @ 1mA | 40 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 1.56W (Ta), 106W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
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RS6G120BHTB1NCH 40V 210A, HSOP8, POWER MOSFE Rohm Semiconductor |
2,500 | - |
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规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 6V, 10V | 1.38mOhm @ 90A, 10V | 4V @ 1mA | 67 nC @ 10 V | ±20V | 4790 pF @ 20 V | - | 3W (Ta), 104W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
