上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS6L120BHTB1NCH 60V 150A, HSOP8, POWER MOSFE Rohm Semiconductor |
2,500 | - |
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规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 6V, 10V | 2.7mOhm @ 90A, 10V | 4V @ 1mA | 51 nC @ 10 V | ±20V | 4080 pF @ 30 V | - | 3W (Ta), 104W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
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RD3G07BBGTL1NCH 40V 70A, TO-252, POWER MOSF Rohm Semiconductor |
474 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 2.3mOhm @ 70A, 10V | 2.5V @ 1mA | 56 nC @ 10 V | ±20V | 3540 pF @ 20 V | - | 89W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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R6014YND3TL1NCH 600V 14A, TO-252, POWER MOSF Rohm Semiconductor |
2,331 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V, 12V | 260mOhm @ 5A, 12V | 6V @ 1.4mA | 20 nC @ 10 V | ±30V | 890 pF @ 100 V | - | 132W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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RD3R05BBHTL1NCH 150V 50A, TO-252, POWER MOSF Rohm Semiconductor |
2,370 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 6V, 10V | 29mOhm @ 25A, 10V | 4V @ 1mA | 37 nC @ 10 V | ±20V | 2150 pF @ 75 V | - | 89W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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R6022YNX3C16NCH 600V 22A, TO-220AB, POWER MO Rohm Semiconductor |
995 | - |
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规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V, 12V | 165mOhm @ 6.5A, 12V | 6V @ 1.8mA | 33 nC @ 10 V | ±30V | 1400 pF @ 100 V | - | 205W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RJ1P04BBHTL1NCH 100V 40A, TO-263AB, POWER MO Rohm Semiconductor |
796 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 6V, 10V | 8.8mOhm @ 40A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±20V | 2410 pF @ 50 V | - | 89W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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RX3P10BBHC16NCH 100V 100A, TO-220AB, POWER M Rohm Semiconductor |
995 | - |
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规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3.3mOhm @ 90A, 10V | 4V @ 1mA | 135 nC @ 10 V | ±20V | 8600 pF @ 50 V | - | 189W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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R6049YNX3C16NCH 600V 49A, TO-220AB, POWER MO Rohm Semiconductor |
991 | - |
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规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V, 12V | 82mOhm @ 11A, 12V | 6V @ 2.9mA | 65 nC @ 10 V | ±30V | 2940 pF @ 100 V | - | 448W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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R6022YNZ4C13NCH 600V 22A, TO-247, POWER MOSF Rohm Semiconductor |
600 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V, 12V | 165mOhm @ 6.5A, 12V | 6V @ 1.8mA | 33 nC @ 10 V | ±30V | 1400 pF @ 100 V | - | 205W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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R6014YNX3C16NCH 600V 14A, TO-220AB, POWER MO Rohm Semiconductor |
988 | - |
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规格书 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V, 12V | 260mOhm @ 5A, 12V | 6V @ 1.4mA | 20 nC @ 10 V | ±30V | 890 pF @ 100 V | - | 132W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
