上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6004RND3TL1600V 4A TO-252, PRESTOMOS WITH I Rohm Semiconductor |
2,700 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 15V | 1.73Ohm @ 2A, 15V | 7V @ 450µA | 10.5 nC @ 15 V | ±30V | 230 pF @ 100 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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RD3L04BBKHRBTLNCH 60V 40A, TO-252 (DPAK), POWE Rohm Semiconductor |
2,789 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 4.5V, 10V | 13.5mOhm @ 40A, 10V | 2.5V @ 348µA | 13 nC @ 10 V | ±20V | 760 pF @ 30 V | - | 53W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 |
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RQ3G270BKFRATCBAUTOMOTIVE NCH 40V 27A POWER MOS Rohm Semiconductor |
3,475 | - |
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规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RQ3G270BJFRATCBPCH -40V -27A, HSMT8AG, POWER MO Rohm Semiconductor |
2,365 | - |
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规格书 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Tc) | 4.5V, 10V | 22mOhm @ 27A, 10V | 2.5V @ 485µA | 32 nC @ 10 V | +5V, -20V | 1810 pF @ 20 V | - | 69W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-HSMT (3.2x3) |
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RQ3L270BLFRATCBNCH 60V 27A, HSMT8AG, POWER MOSF Rohm Semiconductor |
3,500 | - |
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规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RQ3L270BKFRATCBNCH 60V 27A, HSMT8AG, POWER MOSF Rohm Semiconductor |
3,475 | - |
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规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RQ3P270BKFRATCBNCH 100V 27A, HSMT8AG, POWER MOS Rohm Semiconductor |
3,475 | - |
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规格书 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Tc) | 4.5V, 10V | 27mOhm @ 27A, 10V | 2.5V @ 1.6mA | 13.6 nC @ 10 V | ±20V | 670 pF @ 50 V | - | 69W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-HSMT (3.2x3) |
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RD3P02BATTL1PCH -100V -20A POWER MOSFET: RD3 Rohm Semiconductor |
1,120 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 6V, 10V | 116mOhm @ 10A, 10V | 4V @ 1mA | 39 nC @ 10 V | ±20V | 1480 pF @ 50 V | - | 56W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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R6007KND3TL1NCH 600V 7A TO-252, HIGH-SPEED S Rohm Semiconductor |
2,494 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 620mOhm @ 2.4A, 10V | 5V @ 1mA | 14.5 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 78W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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RH6E040BGTB1NCH 30V 125A, HSMT8, POWER MOSFE Rohm Semiconductor |
3,000 | - |
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规格书 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 2.9mOhm @ 40A, 10V | 2.5V @ 1mA | 30 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 2W (Ta), 78W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSMT (3.2x3) |
