上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6011KND3TL1MOSFET N-CH 600V 11A TO252 Rohm Semiconductor |
2,468 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | 5V @ 1mA | 22 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 124W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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R6011END3TL1MOSFET N-CH 600V 11A TO252 Rohm Semiconductor |
300 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | 4V @ 1mA | 32 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 124W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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RD3P08BBDTLMOSFET N-CH 100V 80A TO252 Rohm Semiconductor |
9,410 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 11.6mOhm @ 80A, 10V | 4V @ 1mA | 37 nC @ 10 V | ±20V | 1940 pF @ 50 V | - | 119W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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R6009ENXC7G600V 9A TO-220FM, LOW-NOISE POWE Rohm Semiconductor |
1,000 | - |
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规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Ta) | 10V | 535mOhm @ 2.8A, 10V | 4V @ 1mA | 23 nC @ 10 V | ±20V | 430 pF @ 25 V | - | 48W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6009KNXC7G600V 9A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor |
547 | - |
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规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Ta) | 10V | 535mOhm @ 2.8A, 10V | 5V @ 1mA | 16.5 nC @ 10 V | ±20V | 540 pF @ 25 V | - | 48W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6535KNZC17MOSFET N-CH 650V 35A TO3 Rohm Semiconductor |
280 | - |
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规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 115mOhm @ 18.1A, 10V | 5V @ 1.21mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 102W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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RS3L140GNGZETBNCH 60V 14A POWER MOSFET: RS3L14 Rohm Semiconductor |
2,490 | - |
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规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Ta) | 4.5V, 10V | 6.5mOhm @ 14A, 10V | 2.7V @ 500µA | 58 nC @ 10 V | ±20V | 2980 pF @ 30 V | - | 1.4W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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R6530KNXC7G650V 30A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
884 | - |
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规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 140mOhm @ 14.5A, 10V | 5V @ 960µA | 56 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 86W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6530ENXC7G650V 30A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
713 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 140mOhm @ 14.5A, 10V | 4V @ 960µA | 90 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 86W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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RSJ301N10TLNCH 100V 30A POWER MOSFET : RSJ3 Rohm Semiconductor |
466 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 30A (Ta) | 4V, 10V | 46mOhm @ 15A, 10V | 2.5V @ 1mA | 60 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 50W (Ta) | 150°C (TJ) | - | - | Surface Mount | TO-263S |
