制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
R6511KND3TL1HIGH-SPEED SWITCHING, NCH 650V 1 Rohm Semiconductor |
2,315 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 5V @ 320µA | 22 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 124W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
![]() |
R6006PND3FRATL600V 6A TO-252, AUTOMOTIVE POWER Rohm Semiconductor |
2,435 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 4.5V @ 1mA | 15 nC @ 10 V | ±30V | 460 pF @ 25 V | - | 87W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
![]() |
R8003KND3TL1HIGH-SPEED SWITCHING NCH 800V 3A Rohm Semiconductor |
895 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Ta) | 10V | 1.8Ohm @ 1.5A, 10V | 4.5V @ 2mA | 11.5 nC @ 10 V | ±20V | 300 pF @ 100 V | - | 45W (Ta) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
![]() |
R6007END3TL1MOSFET N-CH 600V 7A TO252 Rohm Semiconductor |
2,476 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 620mOhm @ 2.4A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 78W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
![]() |
R6507KNXC7G650V 7A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor |
979 | - |
|
![]() 规格书 |
- | TO-220-3 Full Pack | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Ta) | 10V | 665mOhm @ 2.4A, 10V | 5V @ 200µA | 14.5 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 46W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
![]() |
R6520KNXC7G650V 20A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
998 | - |
|
![]() 规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 68W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
![]() |
RS1E321GNTB1MOSFET N-CH 30V 32A/80A 8HSOP Rohm Semiconductor |
4,800 | - |
|
![]() 规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 80A (Tc) | 4.5V, 10V | 2.1mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8 nC @ 10 V | ±20V | 2850 pF @ 15 V | - | 3W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
![]() |
R6515KNZC17MOSFET N-CH 650V 15A TO3 Rohm Semiconductor |
299 | - |
|
![]() 规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 5V @ 430µA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
![]() |
R6015KNZC17MOSFET N-CH 600V 15A TO3PF Rohm Semiconductor |
289 | - |
|
![]() 规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 1mA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
![]() |
RS6P060BHTB1NCH 100V 60A, HSOP8, POWER MOSFE Rohm Semiconductor |
2,220 | - |
|
![]() 规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 6V, 10V | 10.6mOhm @ 60A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±20V | 1560 pF @ 50 V | - | 3W (Ta), 73W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |