上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R6030ENZC17MOSFET N-CH 600V 30A TO3PF Rohm Semiconductor |
300 | - |
|
规格书 |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
|
RRH140P03TB1MOSFET P-CH 30V 14A 8SOP Rohm Semiconductor |
13,283 | - |
|
规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4V, 10V | 7mOhm @ 14A, 10V | 2.5V @ 1mA | 80 nC @ 5 V | ±20V | 8000 pF @ 10 V | - | 650mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
R6511END3TL1650V 11A TO-252, LOW-NOISE POWER Rohm Semiconductor |
767 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 4V @ 320µA | 32 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 124W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
R6007JNJGTLMOSFET N-CH 600V 7A LPTS Rohm Semiconductor |
1,080 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5 nC @ 15 V | ±30V | 475 pF @ 100 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | LPTS |
|
R6024KNXMOSFET N-CH 600V 24A TO220FM Rohm Semiconductor |
291 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 45 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
|
R6015KNJTLMOSFET N-CH 600V 15A LPTS Rohm Semiconductor |
3,982 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 1mA | 37.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | LPTS |
|
R6524KNZ4C13650V 24A TO-247, HIGH-SPEED SWIT Rohm Semiconductor |
1,010 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 5V @ 750µA | 45 nC @ 10 V | ±20V | 1850 pF @ 25 V | - | 245W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
|
R6524ENZ4C13650V 24A TO-247, LOW-NOISE POWER Rohm Semiconductor |
475 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 4V @ 750µA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 245W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
|
|
RD3L07BBGTL1NCH 60V 115A, TO-252, POWER MOSF Rohm Semiconductor |
2,359 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 4.5V, 10V | 3.9mOhm @ 70A, 10V | 2.5V @ 1mA | 47 nC @ 10 V | ±20V | 2950 pF @ 30 V | - | 102W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
|
RCJ220N25TLMOSFET N-CH 250V 22A LPTS Rohm Semiconductor |
946 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 22A (Tc) | 10V | 140mOhm @ 11A, 10V | 5V @ 1mA | 60 nC @ 10 V | ±30V | 3200 pF @ 25 V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
