上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R6006JNJGTLMOSFET N-CH 600V 6A LPTS Rohm Semiconductor |
1,098 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 15V | 936mOhm @ 3A, 15V | 7V @ 800µA | 15.5 nC @ 15 V | ±30V | 410 pF @ 100 V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | LPTS |
|
RD3L08BGNTLMOSFET N-CH 60V 80A TO252 Rohm Semiconductor |
1,285 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 5.5mOhm @ 80A, 10V | 2.5V @ 100µA | 71 nC @ 10 V | ±20V | 3620 pF @ 30 V | - | 119W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
RS1E350GNTBMOSFET N-CH 30V 35A/80A 8HSOP Rohm Semiconductor |
2,500 | - |
|
规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 1.7mOhm @ 35A, 10V | 2.5V @ 1mA | 68 nC @ 10 V | ±20V | 4060 pF @ 15 V | - | 3W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
|
R6509KNXC7G650V 9A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor |
3,990 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Ta) | 10V | 585mOhm @ 2.8A, 10V | 5V @ 230µA | 16.5 nC @ 10 V | ±20V | 540 pF @ 25 V | - | 48W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
|
RS1E350BNTB1NCH 30V 80A POWER MOSFET: RS1E35 Rohm Semiconductor |
2,217 | - |
|
规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 1.7mOhm @ 35A, 10V | 2.5V @ 1mA | 185 nC @ 10 V | ±20V | 7900 pF @ 15 V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
|
|
R6524ENXC7G650V 24A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
990 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 4V @ 750µA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
R6524KNXC7G650V 24A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
989 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 5V @ 750µA | 45 nC @ 10 V | ±20V | 1850 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
|
R6024ENXC7G600V 24A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
980 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
|
R6024KNXC7G600V 24A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
970 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 45 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 74W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
|
R8002ANJFRGTLMOSFET N-CH 800V 2A LPTS Rohm Semiconductor |
611 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 4.3Ohm @ 1A, 10V | 5V @ 1mA | 13 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 62W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LPTS |
