制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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R6003KND3TL1MOSFET N-CH 600V 3A TO252 Rohm Semiconductor |
102 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 5.5V @ 1mA | 8 nC @ 10 V | ±20V | 185 pF @ 25 V | - | 44W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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R6507KND3TL1HIGH-SPEED SWITCHING, NCH 650V 7 Rohm Semiconductor |
2,463 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 5V @ 200µA | 14.5 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 78W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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RS1E350BNTBMOSFET N-CH 30V 35A 8HSOP Rohm Semiconductor |
810 | - |
|
![]() 规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 1.7mOhm @ 35A, 10V | 2.5V @ 1mA | 185 nC @ 10 V | ±20V | 7900 pF @ 15 V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
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R6509KND3TL1HIGH-SPEED SWITCHING, NCH 650V 9 Rohm Semiconductor |
2,390 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 585mOhm @ 2.8A, 10V | 5V @ 230µA | 16.5 nC @ 10 V | ±20V | 540 pF @ 25 V | - | 94W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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R6515KNXC7G650V 15A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
998 | - |
|
![]() 规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 5V @ 430µA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6015KNXC7G600V 15A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
989 | - |
|
![]() 规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 1mA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6004JND3TL1MOSFET N-CH 600V 4A TO252 Rohm Semiconductor |
2,495 | - |
|
![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | 7V @ 450µA | 10.5 nC @ 15 V | ±30V | 260 pF @ 100 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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RS6G100BGTB1NCH 40V 100A, HSOP8, POWER MOSFE Rohm Semiconductor |
2,413 | - |
|
![]() 规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 90A, 10V | 2.5V @ 1mA | 24 nC @ 10 V | ±20V | 1510 pF @ 20 V | - | 3W (Ta), 59W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
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RX3L07BGNC16NCH 60V 70A, TO-220AB, POWER MOS Rohm Semiconductor |
1,314 | - |
|
![]() 规格书 |
- | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 4.5V, 10V | 7.2mOhm @ 70A, 10V | 2.5V @ 50µA | 55 nC @ 10 V | ±20V | 2600 pF @ 30 V | - | 96W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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R6035VNXC7G600V 17A TO-220FM, PRESTOMOS WIT Rohm Semiconductor |
746 | - |
|
![]() 规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V, 15V | 114mOhm @ 8A, 15V | 6.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 100 V | - | 81W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |