上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTMS4800NR2GMOSFET N-CH 30V 4.9A 8SOIC onsemi |
0 | - |
|
规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.9A (Ta) | 4.5V, 10V | 20mOhm @ 7.5A, 10V | 3V @ 250µA | 7.7 nC @ 4.5 V | ±20V | 940 pF @ 25 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
NDDL01N60ZT4GMOSFET N-CH 600V 800MA DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 800mA (Ta) | 10V | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 4.9 nC @ 10 V | ±30V | 92 pF @ 25 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
NTD4813NH-35GMOSFET N-CH 30V 7.6A/40A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 13mOhm @ 30A, 10V | 2.5V @ 250µA | 10 nC @ 4.5 V | ±20V | 940 pF @ 12 V | - | 1.27W (Ta), 35.3W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
NTD95N02R-001MOSFET N-CH 24V 12A/32A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 12A (Ta), 32A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2V @ 250µA | 21 nC @ 4.5 V | ±20V | 2400 pF @ 20 V | - | 1.25W (Ta), 86W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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NTD4865N-1GMOSFET N-CH 25V 8.5A/44A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 8.5A (Ta), 44A (Tc) | 4.5V, 10V | 10.9mOhm @ 30A, 10V | 2.5V @ 250µA | 10.8 nC @ 4.5 V | ±20V | 827 pF @ 12 V | - | 1.27W (Ta), 33.3W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
2SK3291-TD-ENCH 4V DRIVE SERIES onsemi |
12,000 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NDDL01N60Z-1GMOSFET N-CH 600V 800MA IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 800mA (Ta) | 10V | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 4.9 nC @ 10 V | ±30V | 92 pF @ 25 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
NTD85N02RT4GMOSFET N-CH 24V 12A/85A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 12A (Ta), 85A (Tc) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2V @ 250µA | 17.7 nC @ 5 V | ±20V | 2050 pF @ 20 V | - | 1.25W (Ta), 78.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
|
2SJ562-TD-EPCH 2.5V DRIVE SERIES onsemi |
9,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTGS3447PT1GMOSFET P-CH 12V 3.4A 6TSOP onsemi |
0 | - |
|
规格书 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 3.4A (Ta) | 1.8V, 4.5V | 40mOhm @ 4.7A, 4.5V | 1V @ 250µA | 15 nC @ 4.5 V | ±8V | 1053 pF @ 6 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
