上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP50R380CEXKSA1MOSFET N-CH 500V 9.9A TO220-3 Infineon Technologies |
180 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.9A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPD90N04S403ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
9,811 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 3.2mOhm @ 90A, 10V | 4V @ 53µA | 66.8 nC @ 10 V | ±20V | 5260 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IPD90N06S407ATMA2MOSFET N-CH 60V 90A TO252-31 Infineon Technologies |
51,853 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 6.9mOhm @ 90A, 10V | 4V @ 40µA | 56 nC @ 10 V | ±20V | - | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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ISZ0702NLSATMA1MOSFET N-CH 60V 17A/86A TSDSON Infineon Technologies |
6,865 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 86A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.3V @ 26µA | 39 nC @ 10 V | ±20V | 2500 pF @ 30 V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-25 |
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IPD60R400CEAUMA1MOSFET N-CH 600V 14.7A TO252 Infineon Technologies |
4,723 | - |
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规格书 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14.7A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 112W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-2 |
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IPP041N04NGXKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
399 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 45µA | 56 nC @ 10 V | ±20V | 4500 pF @ 20 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPC100N04S5L1R9ATMA1MOSFET N-CH 40V 100A 8TDSON-34 Infineon Technologies |
74,418 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 50µA | 81 nC @ 10 V | ±16V | 4310 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
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BSC0502NSIATMA1MOSFET N-CH 30V 26A/100A TDSON Infineon Technologies |
23,737 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 30A, 10V | 2V @ 250µA | 26 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 2.5W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
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IPD023N04NF2SATMA1TRENCH <= 40V Infineon Technologies |
1,667 | - |
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规格书 |
StrongIRFET™2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 143A (Tc) | 6V, 10V | 2.3mOhm @ 70A, 10V | 3.4V @ 81µA | 102 nC @ 10 V | ±20V | 4800 pF @ 20 V | - | 3W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRFR48ZTRPBFMOSFET N-CH 55V 42A DPAK Infineon Technologies |
4,233 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
