上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLR3105TRPBFMOSFET N-CH 55V 25A DPAK Infineon Technologies |
18,605 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 5V, 10V | 37mOhm @ 15A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±16V | 710 pF @ 25 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSZ033NE2LS5ATMA1MOSFET N-CH 25V 18A/40A TSDSON Infineon Technologies |
5,000 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2V @ 250µA | 18.3 nC @ 10 V | ±16V | 1230 pF @ 12 V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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IRFR9120NTRLPBFMOSFET P-CH 100V 6.6A DPAK Infineon Technologies |
7,277 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPD25CN10NGATMA1MOSFET N-CH 100V 35A TO252-3 Infineon Technologies |
3,796 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 25mOhm @ 35A, 10V | 4V @ 39µA | 31 nC @ 10 V | ±20V | 2070 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IAUZ40N06S5N050ATMA1MOSFET N-CH 60V 40A TSDSON-8-33 Infineon Technologies |
4,419 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tj) | - | 5mOhm @ 20A, 10V | 3.4V @ 29µA | 30.5 nC @ 10 V | ±20V | 2200 pF @ 30 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-33 |
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IPA60R650CEXKSA1MOSFET N-CH 600V 7A TO220-FP Infineon Technologies |
500 | - |
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规格书 |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRFH5301TRPBFMOSFET N-CH 30V 35A/100A PQFN Infineon Technologies |
9,076 | - |
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规格书 |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.85mOhm @ 50A, 10V | 2.35V @ 100µA | 77 nC @ 10 V | ±20V | 5114 pF @ 15 V | - | 3.6W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
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IPN80R900P7ATMA1MOSFET N-CHANNEL 800V 6A SOT223 Infineon Technologies |
5,077 | - |
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规格书 |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15 nC @ 10 V | ±20V | 350 pF @ 500 V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
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IPD19DP10NMATMA1TRENCH >=100V PG-TO252-3 Infineon Technologies |
2,847 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2.6A (Ta), 13.7A (Tc) | 10V | 186mOhm @ 12A, 10V | 4V @ 1.04mA | 45 nC @ 10 V | ±20V | 2000 pF @ 50 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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BSC026NE2LS5ATMA1MOSFET N-CH 25V 24A/82A TDSON Infineon Technologies |
1,559 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 24A (Ta), 82A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 16 nC @ 10 V | ±16V | 1100 pF @ 12 V | - | 2.5W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
