上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD22N08S2L50ATMA1MOSFET N-CH 75V 27A TO252-3 Infineon Technologies |
9,994 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 27A (Tc) | 5V, 10V | 50mOhm @ 50A, 10V | 2V @ 31µA | 33 nC @ 10 V | ±20V | 630 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPP50R280CEXKSA1MOSFET N-CH 500V 13A TO220-3 Infineon Technologies |
323 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPD80R2K7C3AATMA1MOSFET N-CH TO252-3 Infineon Technologies |
2,495 | - |
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规格书 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 2.7Ohm @ 1.2A, 10V | 3.9V @ 250µA | 1.5 nC @ 10 V | ±20V | 290 pF @ 100 V | - | 42W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA (DPAK) |
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IPP030N06NF2SAKMA1TRENCH 40<-<100V PG-TO220-3 Infineon Technologies |
566 | - |
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规格书 |
StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 26A (Ta), 119A (Tc) | 6V, 10V | 3.05mOhm @ 70A, 10V | 3.3V @ 80µA | 102 nC @ 10 V | ±20V | 4600 pF @ 30 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-U05 |
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BSZ021N04LS6ATMA1MOSFET N-CH 40V 25A/40A TSDSON Infineon Technologies |
12,111 | - |
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规格书 |
OptiMOS™ 6 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.3V @ 250µA | 31 nC @ 10 V | ±20V | 2700 pF @ 20 V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-34 |
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IPA80R900P7XKSA1MOSFET N-CH 800V 6A TO220 Infineon Technologies |
172 | - |
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规格书 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15 nC @ 10 V | ±20V | 350 pF @ 500 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPD50N06S214ATMA2MOSFET N-CH 55V 50A TO252-31 Infineon Technologies |
3,427 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 50A (Tc) | 10V | 14.4mOhm @ 32A, 10V | 4V @ 80µA | 52 nC @ 10 V | ±20V | 1485 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPP129N10NF2SAKMA1TRENCH >=100V Infineon Technologies |
1,382 | - |
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规格书 |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Ta), 52A (Tc) | 6V, 10V | 12.9mOhm @ 30A, 10V | 3.8V @ 30µA | 28 nC @ 10 V | ±20V | 1300 pF @ 50 V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPC100N04S51R7ATMA1MOSFET N-CH 40V 100A 8TDSON-34 Infineon Technologies |
19,970 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 7V, 10V | 1.7mOhm @ 50A, 10V | 3.4V @ 60µA | 83 nC @ 10 V | ±20V | 4810 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
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IPC100N04S5L1R5ATMA1MOSFET N-CH 40V 100A 8TDSON-34 Infineon Technologies |
10,335 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 60µA | 95 nC @ 10 V | ±16V | 5340 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
