上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISC058N04NM5ATMA140V 5.8M OPTIMOS MOSFET SUPERSO8 Infineon Technologies |
27,664 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta), 63A (Tc) | 7V, 10V | 5.8mOhm @ 31A, 10V | 3.4V @ 13µA | 16 nC @ 10 V | ±20V | 1100 pF @ 20 V | - | 3W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
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IPD75N04S406ATMA1MOSFET N-CH 40V 75A TO252-3 Infineon Technologies |
1,517 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 5.9mOhm @ 75A, 10V | 4V @ 26µA | 32 nC @ 10 V | ±20V | 2550 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IPD90N04S405ATMA1MOSFET N-CH 40V 86A TO252-3 Infineon Technologies |
8,591 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 86A (Tc) | 10V | 5.2mOhm @ 86A, 10V | 4V @ 30µA | 37 nC @ 10 V | ±20V | 2960 pF @ 25 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IPD80R2K0P7ATMA1MOSFET N-CH 800V 3A TO252-3 Infineon Technologies |
2,567 | - |
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规格书 |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9 nC @ 10 V | ±20V | 175 pF @ 500 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD26N06S2L35ATMA2MOSFET N-CH 55V 30A TO252-31 Infineon Technologies |
2,135 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 4.5V, 10V | 35mOhm @ 13A, 10V | 2V @ 26µA | 24 nC @ 10 V | ±20V | 621 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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BSC032NE2LSATMA1MOSFET N-CH 25V 22A/84A TDSON Infineon Technologies |
23,262 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 22A (Ta), 84A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2V @ 250µA | 16 nC @ 10 V | ±20V | 1200 pF @ 12 V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
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BSC042N03MSGATMA1MOSFET N-CH 30V 17A/93A TDSON Infineon Technologies |
1,699 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 93A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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BSZ0589NSATMA1MOSFET N-CH 30V 17A TSDSON Infineon Technologies |
9,792 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta) | 4.5V, 10V | 4.4mOhm @ 8A, 10V | 2V @ 250µA | 15 nC @ 10 V | ±20V | 950 pF @ 15 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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BSO110N03MSGXUMA1MOSFET N-CH 30V 10A 8DSO Infineon Technologies |
7,253 | - |
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规格书 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 11mOhm @ 12.1A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IPN60R360P7SATMA1MOSFET N-CHANNEL 600V 9A SOT223 Infineon Technologies |
5,665 | - |
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规格书 |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±20V | 555 pF @ 400 V | - | 7W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
