上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IAUMN10S5N016GAUMA1MOSFET_(75V 120V( Infineon Technologies |
1,965 | - |
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规格书 |
OptiMOS™ 5 | 4-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 220A (Tj) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.8V @ 230µA | 190 nC @ 10 V | ±20V | 13570 pF @ 50 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-4-1 |
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IAUA210N10S5N024AUMA1MOSFET_(75V 120V( PG-HSOF-5 Infineon Technologies |
3,600 | - |
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规格书 |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Tj) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 150µA | 119 nC @ 10 V | ±20V | 8696 pF @ 50 V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
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IPP039N10N5AKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
500 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3.9mOhm @ 50A, 10V | 3.8V @ 125µA | 95 nC @ 10 V | ±20V | 7000 pF @ 50 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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AUIRF7736M2TRMOSFET N-CH 40V 22A DIRECTFET Infineon Technologies |
3,844 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric M4 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 22A (Ta), 108A (Tc) | 10V | 3mOhm @ 65A, 10V | 4V @ 150µA | 108 nC @ 10 V | ±20V | 4267 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M4 |
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IPA90R500C3XKSA2MOSFET N-CH 900V 11A TO220 Infineon Technologies |
1,915 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPP020N06NAKSA1MOSFET N-CH 60V 29A/120A TO220-3 Infineon Technologies |
662 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Ta), 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 2.8V @ 143µA | 106 nC @ 10 V | ±20V | 7800 pF @ 30 V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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GS-065-004-6-L-MRGS-065-004-6-L-MR Infineon Technologies Canada Inc. |
357 | - |
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- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 4.6A (Tc) | 6V | 455mOhm @ 1.2A, 6V | 2.6V @ 1mA | 0.8 nC @ 6 V | +7V, -10V | 26 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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IPDQ65R099CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
750 | - |
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规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4.5V @ 480µA | 39 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 186W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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SPI21N50C3XKSA1MOSFET N-CH 560V 21A TO262-3 Infineon Technologies |
940 | - |
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规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPA65R150CFDXKSA2MOSFET N-CH 650V 22.4A TO220 Infineon Technologies |
494 | - |
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规格书 |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
