上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IQD009N06NM5CGATMA1OPTIMOS 6 POWER-TRANSISTOR Infineon Technologies |
4,872 | - |
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规格书 |
OptiMOS™ 5 | 9-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 445A (Tc) | 6V, 10V | 0.9mOhm @ 50A, 10V | 3.3V @ 163µA | 150 nC @ 10 V | ±20V | 12000 pF @ 30 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TTFN-9-U02 |
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IPL60R180P6AUMA1MOSFET N-CH 600V 22.4A 4VSON Infineon Technologies |
4,990 | - |
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规格书 |
CoolMOS™ P6 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22.4A (Tc) | 10V | 180mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 176W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IPB60R160P6ATMA1MOSFET N-CH 600V 23.8A D2PAK Infineon Technologies |
2,219 | - |
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规格书 |
CoolMOS™ P6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IAUA180N10S5N029AUMA1MOSFET_(75V 120V( PG-HSOF-5 Infineon Technologies |
1,926 | - |
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规格书 |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tj) | 6V, 10V | 2.9mOhm @ 90A, 10V | 3.8V @ 130µA | 105 nC @ 10 V | ±20V | 7673 pF @ 50 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
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IPT65R155CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
2,000 | - |
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规格书 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | - | - | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 |
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AUIRFR4615TRLMOSFET N-CH 150V 33A DPAK Infineon Technologies |
3,000 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPB80N06S2H5ATMA2MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
875 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 230µA | 155 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB80N04S204ATMA2MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
6,388 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.4mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IQD016N08NM5CGATMA1OPTIMOS 6 POWER-TRANSISTOR Infineon Technologies |
4,824 | - |
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规格书 |
OptiMOS™ 5 | 9-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 31A (Ta), 323A (Tc) | 6V, 10V | 1.57mOhm @ 50A, 10V | 3.8V @ 159µA | 133 nC @ 10 V | ±20V | 9200 pF @ 40 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TTFN-9-U02 |
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IQD020N10NM5CGATMA1OPTIMOS 6 POWER-TRANSISTOR Infineon Technologies |
4,942 | - |
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规格书 |
OptiMOS™ 5 | 9-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 26A (Ta), 273A (Tc) | 6V, 10V | 2.05mOhm @ 50A, 10V | 3.8V @ 159µA | 134 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TTFN-9-U02 |
