上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPI60R199CPXKSA2HIGH POWER_LEGACY Infineon Technologies |
500 | - |
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规格书 |
CoolMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPT65R190CFD7XTMA1MOSFET N-CH 650V 8HSOF Infineon Technologies |
1,990 | - |
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规格书 |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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IPB65R230CFD7AATMA1AUTOMOTIVE_COOLMOS PG-TO263-3 Infineon Technologies |
820 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 230mOhm @ 5.2A, 10V | 4.5V @ 260µA | 23 nC @ 10 V | ±20V | 1044 pF @ 400 V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFS3307ZTRRPBFMOSFET N-CH 75V 120A D2PAK Infineon Technologies |
1,198 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±20V | 4750 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IPI076N12N3GAKSA1MOSFET N-CH 120V 100A TO262-3 Infineon Technologies |
476 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 7.6mOhm @ 100A, 10V | 4V @ 130µA | 101 nC @ 10 V | ±20V | 6640 pF @ 60 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPDQ65R125CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
750 | - |
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规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 32 nC @ 10 V | ±20V | 1566 pF @ 400 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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BSC016N06NSSCATMA1TRENCH 40<-<100V PG-WSON-8 Infineon Technologies |
3,530 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 234A (Tc) | 6V, 10V | 1.6mOhm @ 50A, 10V | 3.3V @ 95µA | 95 nC @ 10 V | ±20V | 6500 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
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IQDH88N06LM5CGATMA1TRENCH 40<-<100V Infineon Technologies |
3,940 | - |
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规格书 |
OptiMOS™ 5 | 9-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 447A (Tc) | 4.5V, 10V | 0.86mOhm @ 50A, 10V | 2.3V @ 163µA | 152 nC @ 10 V | ±20V | 14000 pF @ 30 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TTFN-9-U02 |
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IAUMN08S5N013GAUMA1MOSFET_(75V 120V( Infineon Technologies |
1,965 | - |
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规格书 |
OptiMOS™ 5 | 4-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 250A (Tj) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.8V @ 214µA | 179 nC @ 10 V | ±20V | 12496 pF @ 40 V | - | 307W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-4-1 |
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IPB65R190CFDATMA2MOSFET N-CH 650V 17.5A TO263-3 Infineon Technologies |
893 | - |
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规格书 |
CoolMOS™ CFD2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
