制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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BSP296NL6327HTSA1MOSFET N-CH 100V 1.2A SOT223-4 Infineon Technologies |
0 | - |
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- |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7 nC @ 10 V | ±20V | 152.7 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SOT223-4 |
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IPC50R045CPX1SA1MOSFET N-CH BARE DIE Infineon Technologies |
0 | - |
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- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC90R1K0C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
0 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC90R1K2C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
0 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC90R500C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
0 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC90R800C3X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
0 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SISC097N24DX1SA1TRANSISTOR P-CH BARE DIE Infineon Technologies |
0 | - |
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- |
- | - | Bulk | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC302N08N3X2SA1MOSFET N-CH 80V SAWN WAFER Infineon Technologies |
0 | - |
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- |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD65R1K5CEAUMA1MOSFET N-CH 700V 5.2A TO252-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPN70R1K0CEATMA1MOSFET N-CH 700V 7.4A SOT223 Infineon Technologies |
0 | - |
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![]() 规格书 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 7.4A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 150µA | 14.9 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |