上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUXDIFZ44ESTRLMOSFET N-CH 60V 48A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPI50R399CPXKSA2MOSFET N-CH 500V 9A TO262-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23 nC @ 10 V | ±20V | 890 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPP023N04NGHKSA1MOSFET N-CH 40V 90A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ 3 | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP037N06L3GHKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ 3 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | ±20V | 13000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP05CN10NGHKSA1MOSFET N-CH 100V 100A TO-220 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ 2 | - | Tube | Active | - | - | - | 100A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPP11N65C3HKSA1MOSFET N-CH 650V 11A TO-220 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | - | Tube | Active | - | - | - | 11A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD60R380E6BTMA1MOSFET N-CH 600V 10.6A TO252-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 83W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPU80R1K4CEAKMA1MOSFET N-CH 800V 3.9A TO251-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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64-0055PBFMOSFET N-CH 60V 160A TO220AB Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | - | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 160A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | - |
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IRFC3004EBMOSFET N-CH WAFER Infineon Technologies |
0 | - |
|
规格书 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
