上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSL802SNH6327XTSA1MOSFET N-CH 20V 7.5A TSOP-6 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 7.5A (Ta) | 1.8V, 2.5V | 22mOhm @ 7.5A, 2.5V | 750mV @ 30µA | 4.7 nC @ 2.5 V | ±8V | 1347 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
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BSR606NH6327XTSA1MOSFET N-CH 60V 2.3A SC59 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.3A (Ta) | 4.5V, 10V | 60mOhm @ 2.3A, 10V | 2.3V @ 15µA | 5.6 nC @ 5 V | ±20V | 657 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SC59-3 |
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BSS119NH6433XTMA1MOSFET N-CH 100V 190MA SOT23-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 2.3V @ 13µA | 0.6 nC @ 10 V | ±20V | 20.9 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3 |
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BSS192PH6327XTSA1MOSFET P-CH 250V 190MA SOT89 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS™ | TO-243AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1 nC @ 10 V | ±20V | 104 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
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BSS225H6327XTSA1MOSFET N-CH 600V 90MA SOT89 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS™ | TO-243AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90mA (Ta) | 4.5V, 10V | 45Ohm @ 90mA, 10V | 2.3V @ 94µA | 5.8 nC @ 10 V | ±20V | 131 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
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IPB065N10N3GATMA1MOSFET N-CH 100V 80A D2PAK Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 6.5mOhm @ 80A, 10V | 3.5V @ 90µA | 64 nC @ 10 V | ±20V | 4910 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB120N04S404ATMA1MOSFET N-CH 40V 120A D2PAK Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 3.6mOhm @ 100A, 10V | 4V @ 40µA | 55 nC @ 10 V | ±20V | 4100 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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IPB120P04P404ATMA1MOSFET P-CH 40V 120A D2PAK Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 340µA | 205 nC @ 10 V | ±20V | 14790 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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IPB140N08S404ATMA1MOSFET N-CH 80V 140A TO263-7 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 140A (Tc) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 100µA | 80 nC @ 10 V | ±20V | 5500 pF @ 25 V | - | 161W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
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IPB160N08S403ATMA1MOSFET N-CH 80V 160A TO263-7 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ T2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 160A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 150µA | 112 nC @ 10 V | ±20V | 7750 pF @ 25 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
