上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRL60B216MOSFET N-CH 60V 195A TO220AB Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 250µA | 258 nC @ 4.5 V | ±20V | 15570 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPD60R520CPATMA1MOSFET N-CH 600V 6.8A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ CP | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31 nC @ 10 V | ±20V | 630 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R600CPATMA1MOSFET N-CH 600V 6.1A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ CP | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27 nC @ 10 V | ±20V | 550 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP052NE7N3GHKSA1MOSFET N-CH 75V 80A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 3.8V @ 91µA | 68 nC @ 10 V | ±20V | 4750 pF @ 37.5 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB60R230P6ATMA1MOSFET N-CH 600V 16.8A TO263-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ P6 | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-1 |
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IPP039N04LGHKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP50R299CPHKSA1MOSFET N-CH 550V 12A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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AUIRF7739L2MOSFET N-CH 40V 46A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 270A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 11880 pF @ 25 V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
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AUXFN8403TRMOSFET N-CH 40V 95A 8PQFN Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-TQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98 nC @ 10 V | ±20V | 3174 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFH7882TRPBFMOSFET N-CH 80V 26A 8PQFN Infineon Technologies |
0 | - |
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规格书 |
FASTIRFET™ | 8-VQFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 26A (Ta) | 10V | 3.1mOhm @ 50A, 10V | 3.6V @ 250µA | 74 nC @ 10 V | ±20V | 3186 pF @ 40 V | - | 4W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
