上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD65R650CEATMA1MOSFET N-CH 650V 10.1A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.1A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD85P04P407ATMA1MOSFET P-CH 40V 85A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 85A (Tc) | 10V | 7.3mOhm @ 85A, 10V | 4V @ 150µA | 89 nC @ 10 V | ±20V | 6085 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IPI120N08S403AKSA1MOSFET N-CH 80V 120A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPI120N08S404AKSA1MOSFET N-CH 80V 120A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ T2 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 4V @ 120µA | 95 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPI120N10S403AKSA1MOSFET N-CH 100V 120A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPI120N10S405AKSA1MOSFET N-CH 100V 120A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ T2 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 5.3mOhm @ 100A, 10V | 3.5V @ 120µA | 91 nC @ 10 V | ±20V | 6540 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPI120P04P4L03AKSA1MOSFET P-CH 40V 120A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234 nC @ 10 V | ±16V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPI65R280E6XKSA1MOSFET N-CH 650V 13.8A TO262-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ E6 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPI80P03P405AKSA1MOSFET P-CH 30V 80A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 253µA | 130 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPI80P04P405AKSA1MOSFET P-CH 40V 80A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 250µA | 151 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
