上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPW65R115CFD7AXKSA1MOSFET N-CH 650V 21A TO247-3-41 Infineon Technologies |
240 | - |
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规格书 |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 490µA | 41 nC @ 10 V | ±20V | 1950 pF @ 400 V | - | 114W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
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IPTG054N15NM5ATMA1TRENCH >=100V Infineon Technologies |
1,690 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 17.5A (Ta), 143A (Tc) | 8V, 10V | 5.4mOhm @ 50A, 10V | 4.6V @ 191µA | 73 nC @ 10 V | ±20V | 5700 pF @ 75 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8 |
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IST015N06NM5AUMA1OPTIMOS 5 POWER MOSFET 60 V Infineon Technologies |
1,081 | - |
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规格书 |
OptiMOS™ 5 | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Ta), 242A (Tc) | 6V, 10V | 1.5mOhm @ 50A, 10V | 3.3V @ 95µA | 89 nC @ 10 V | ±20V | 5200 pF @ 30 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-1 |
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AUIRFB8407MOSFET N-CH 40V 195A TO220AB Infineon Technologies |
1,000 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPZA60R080P7XKSA1MOSFET N-CH 600V 37A TO247-4 Infineon Technologies |
243 | - |
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规格书 |
CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IPT014N08NM5ATMA1MOSFET N-CH 80V 37A/331A HSOF-8 Infineon Technologies |
2,194 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 37A (Ta), 331A (Tc) | 6V, 10V | 1.4mOhm @ 150A, 10V | 3.8V @ 280µA | 200 nC @ 10 V | ±20V | 14000 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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IPDD60R055CFD7XTMA1MOSFET N-CH 600V 52A HDSOP-10 Infineon Technologies |
1,385 | - |
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规格书 |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | - | 55mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2724 pF @ 400 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
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IPW65R099CFD7AXKSA1MOSFET N-CH 650V 24A TO247-3-41 Infineon Technologies |
186 | - |
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规格书 |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 99mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
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IPT60R055CFD7XTMA1MOSFET N-CH 600V 44A 8HSOF Infineon Technologies |
1,764 | - |
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规格书 |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 44A (Tc) | 10V | 55mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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IPDQ60R040S7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
750 | - |
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规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | 3127 pF @ 300 V | - | 272W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
