上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP60R160C6XKSA1MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies |
488 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75 nC @ 10 V | ±20V | 1660 pF @ 100 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPF009N04NF2SATMA1TRENCH <= 40V Infineon Technologies |
650 | - |
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规格书 |
StrongIRFET™2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 49A (Ta), 302A (Tc) | 6V, 10V | 0.9mOhm @ 100A, 10V | 3.4V @ 249µA | 315 nC @ 10 V | ±20V | 15000 pF @ 20 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-U02 |
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IPP60R125CFD7XKSA1MOSFET N-CH 600V 18A TO220-3 Infineon Technologies |
287 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36 nC @ 10 V | ±20V | 1503 pF @ 400 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPT022N10NF2SATMA1MOSFET Infineon Technologies |
1,800 | - |
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规格书 |
StrongIRFET™ 2 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 29A (Ta), 236A (Tc) | 6V, 10V | 2.25mOhm @ 150A, 10V | 3.8V @ 169µA | 155 nC @ 10 V | ±20V | 7300 pF @ 50 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-10 |
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IPP60R120C7XKSA1MOSFET N-CH 600V 19A TO220-3 Infineon Technologies |
622 | - |
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规格书 |
CoolMOS™ C7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB024N08N5ATMA1MOSFET N-CH 80V 120A D2PAK Infineon Technologies |
990 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 154µA | 123 nC @ 10 V | ±20V | 8970 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPW65R155CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
240 | - |
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规格书 |
CoolMOS™ CFD7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 155mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1283 pF @ 400 V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IPB030N08N3GATMA1MOSFET N-CH 80V 160A TO263-7 Infineon Technologies |
2,493 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 160A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 155µA | 117 nC @ 10 V | ±20V | 8110 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
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IAUS240N08S5N019ATMA1MOSFET N-CH 80V 240A HSOG-8 Infineon Technologies |
2,481 | - |
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规格书 |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 160µA | 130 nC @ 10 V | ±20V | 9264 pF @ 40 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-8-1 |
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IPW60R145CFD7XKSA1MOSFET N-CH 600V 16A TO247-3 Infineon Technologies |
4 | - |
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规格书 |
CoolMOS™ CFD7 | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 145mOhm @ 6.8A, 10V | 4V @ 340µA | 31 nC @ 10 V | ±20V | 1330 pF @ 400 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
