制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SPP15N65C3HKSA1MOSFET N-CH 650V 15A TO220-3 Infineon Technologies |
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![]() 规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPP15P10PGHKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
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SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48 nC @ 10 V | ±20V | 1280 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SPP15P10PLGHKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
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SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62 nC @ 10 V | ±20V | 1490 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SPP24N60CFDHKSA1MOSFET N-CH 650V 21.7A TO220-3 Infineon Technologies |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 21.7A (Tc) | 10V | 185mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPS03N60C3BKMA1MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies |
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CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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SPU03N60C3BKMA1MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies |
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CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
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SPW07N60CFDFKSA1MOSFET N-CH 650V 6.6A TO247-3 Infineon Technologies |
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CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.6A (Tc) | 10V | 700mOhm @ 4.6A, 10V | 5V @ 300µA | 47 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IRF1324SPBFMOSFET N-CH 24V 195A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF6218SPBFMOSFET P-CH 150V 27A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | - | - | - | Surface Mount | D2PAK |
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IRF8734PBFMOSFET N-CH 30V 21A 8SO Infineon Technologies |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 2.35V @ 50µA | 30 nC @ 4.5 V | ±20V | 3175 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |