上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLS3034PBFMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRLS3036PBFMOSFET N-CH 60V 195A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRLS4030-7PPBFMOSFET N-CH 100V 190A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11490 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRLS4030PBFMOSFET N-CH 100V 180A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130 nC @ 4.5 V | ±16V | 11360 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF1324LPBFMOSFET N-CH 24V 195A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF1324STRLPBFMOSFET N-CH 24V 195A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFB3307ZGPBFMOSFET N-CH 75V 120A TO220AB Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±20V | 4750 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFB4110GPBFMOSFET N-CH 100V 120A TO220AB Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 9620 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFB4115GPBFMOSFET N-CH 150V 104A TO220AB Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 104A (Tc) | 10V | 11mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFB4321GPBFMOSFET N-CH 150V 83A TO220AB Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4460 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
