制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IPP80N06S2L11AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 11mOhm @ 60A, 10V | 2V @ 93µA | 80 nC @ 10 V | ±20V | 2075 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N06S2LH5AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ 3 | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2V @ 250µA | 190 nC @ 10 V | ±20V | 5000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N08S2L07AKSA1MOSFET N-CH 75V 80A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 4.5V, 10V | 7.1mOhm @ 80A, 10V | 2V @ 250µA | 233 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP90R1K0C3XKSA1MOSFET N-CH 900V 5.7A TO220-3 Infineon Technologies |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34 nC @ 10 V | ±20V | 850 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP90R1K2C3XKSA1MOSFET N-CH 900V 5.1A TO220-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP90R340C3XKSA1MOSFET N-CH 900V 15A TO220-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94 nC @ 10 V | ±20V | 2400 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP90R500C3XKSA1MOSFET N-CH 900V 11A TO220-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP90R800C3XKSA1MOSFET N-CH 900V 6.9A TO220-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPS12CN10LGBKMA1MOSFET N-CH 100V 69A TO251-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 69A (Tc) | 4.5V, 10V | 11.8mOhm @ 69A, 10V | 2.4V @ 83µA | 58 nC @ 10 V | ±20V | 5600 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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IPU135N08N3 GMOSFET N-CH 80V 50A TO251-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 50A (Tc) | 6V, 10V | 13.5mOhm @ 50A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1730 pF @ 40 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3 |