上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP300L6327HUSA1MOSFET N-CH 800V 190MA SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | 4V @ 1mA | - | ±20V | 230 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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BSP316PL6327HTSA1MOSFET P-CH 100V 680MA SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4 nC @ 10 V | ±20V | 146 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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BSP317PL6327HTSA1MOSFET P-CH 250V 430MA SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1 nC @ 10 V | ±20V | 262 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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BSP318S E6327MOSFET N-CH 60V 2.6A SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.6A (Ta) | 4.5V, 10V | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20 nC @ 10 V | ±20V | 380 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSP320S E6327MOSFET N-CH 60V 2.9A SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12 nC @ 10 V | ±20V | 340 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSP324 E6327MOSFET N-CH 400V 170MA SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 170mA (Ta) | 4.5V, 10V | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9 nC @ 10 V | ±20V | 154 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSP324L6327HTSA1MOSFET N-CH 400V 170MA SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 170mA (Ta) | 4.5V, 10V | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9 nC @ 10 V | ±20V | 154 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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BSP372 E6327MOSFET N-CH 100V 1.7A SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Ta) | 5V | 310mOhm @ 1.7A, 5V | 2V @ 1mA | - | ±14V | 520 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSP373 E6327MOSFET N-CH 100V 1.7A SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Ta) | 10V | 300mOhm @ 1.7A, 10V | 4V @ 1mA | - | ±20V | 550 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSP603S2LHUMA1MOSFET N-CH 55V 5.2A SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 5.2A (Ta) | 4.5V, 10V | 33mOhm @ 2.6A, 10V | 2V @ 50µA | 42 nC @ 10 V | ±20V | 1390 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
