制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IRF6638TRPBFMOSFET N-CH 30V 25A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta), 140A (Tc) | 4.5V, 10V | 2.9mOhm @ 25A, 10V | 2.35V @ 100µA | 45 nC @ 4.5 V | ±20V | 3770 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF6655TRPBFMOSFET N-CH 100V 4.2A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric SH | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SH |
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IRF6662TR1PBFMOSFET N-CH 100V 8.3A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric MZ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.3A (Ta), 47A (Tc) | 10V | 22mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MZ |
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IRF6662TRPBFMOSFET N-CH 100V 8.3A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric MZ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.3A (Ta), 47A (Tc) | 10V | 22mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MZ |
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IRF6665TR1PBFMOSFET N-CH 100V 4.2A DIRECTFET Infineon Technologies |
0 | - |
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![]() 规格书 |
HEXFET® | DirectFET™ Isometric SH | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SH |
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IRF6665TRPBFMOSFET N-CH 100V 4.2A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric SH | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SH |
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IRF6678TR1PBFMOSFET N-CH 30V 30A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65 nC @ 4.5 V | ±20V | 5640 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF6678TRPBFMOSFET N-CH 30V 30A DIRECTFET Infineon Technologies |
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![]() 规格书 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65 nC @ 4.5 V | ±20V | 5640 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF6691TR1PBFMOSFET N-CH 20V 32A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71 nC @ 4.5 V | ±12V | 6580 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
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IRF6691TRPBFMOSFET N-CH 20V 32A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71 nC @ 4.5 V | ±12V | 6580 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |