上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSS139 E6906MOSFET N-CH 250V 100MA SOT23-3 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 250 V | 100mA (Ta) | 0V, 10V | 14Ohm @ 0.1mA, 10V | 1V @ 56µA | 3.5 nC @ 5 V | ±20V | 76 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSS159N E6327MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9 nC @ 5 V | ±20V | 44 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSS159N E6906MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9 nC @ 5 V | ±20V | 44 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSS169 E6906MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8 nC @ 7 V | ±20V | 68 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSS192PL6327HTSA1MOSFET P-CH 250V 190MA SOT89 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1 nC @ 10 V | ±20V | 104 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
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BSS225MOSFET N-CH 600V 90MA SOT89 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 90mA (Ta) | 4.5V, 10V | 45Ohm @ 90mA, 10V | 2.3V @ 94µA | 5.8 nC @ 10 V | ±20V | 131 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
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BSS225L6327HTSA1MOSFET N-CH 600V 90MA SOT89 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 90mA (Ta) | 4.5V, 10V | 45Ohm @ 90mA, 10V | 2.3V @ 94µA | 5.8 nC @ 10 V | ±20V | 131 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
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BSS7728NMOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.3V @ 26µA | 1.5 nC @ 10 V | ±20V | 56 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSS87L6327HTSA1MOSFET N-CH 240V 260MA SOT89 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240 V | 260mA (Ta) | 4.5V, 10V | 6Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5 nC @ 10 V | ±20V | 97 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
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BTS244ZNKSA1MOSFET N-CH 55V 35A TO220-5-3 Infineon Technologies |
0 | - |
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规格书 |
TEMPFET® | TO-220-5 Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-5-3 |
