制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IRF7204PBFMOSFET P-CH 20V 5.3A 8SO Infineon Technologies |
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![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±12V | 860 pF @ 10 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF9410PBFMOSFET N-CH 30V 7A 8SO Infineon Technologies |
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![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | 1V @ 250µA | 27 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7403PBFMOSFET N-CH 30V 8.5A 8SO Infineon Technologies |
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![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.5A (Ta) | 4.5V, 10V | 22mOhm @ 4A, 10V | 1V @ 250µA | 57 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7488PBFMOSFET N-CH 80V 6.3A 8SO Infineon Technologies |
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![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80 V | 6.3A (Ta) | 10V | 29mOhm @ 3.8A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 1680 pF @ 25 V | - | 2.5W (Ta) | - | - | - | Surface Mount | 8-SO |
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IRF7353D2PBFMOSFET N-CH 30V 6.5A 8SO Infineon Technologies |
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![]() 规格书 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33 nC @ 10 V | ±20V | 650 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7466PBFMOSFET N-CH 30V 11A 8SO Infineon Technologies |
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![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 23 nC @ 4.5 V | ±20V | 2100 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7452PBFMOSFET N-CH 100V 4.5A 8SO Infineon Technologies |
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![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.5A (Ta) | 10V | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 930 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7807VD2PBFMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
0 | - |
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![]() 规格书 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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SI4420DYPBFMOSFET N-CH 30V 12.5A 8SO Infineon Technologies |
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![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78 nC @ 10 V | ±20V | 2240 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7475PBFMOSFET N-CH 12V 11A 8SO Infineon Technologies |
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![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 11A (Ta) | 2.8V, 4.5V | 15mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19 nC @ 4.5 V | ±12V | 1590 pF @ 6 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |