上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7453PBFMOSFET N-CH 250V 2.2A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Ta) | 10V | 230mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38 nC @ 10 V | ±30V | 930 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7456PBFMOSFET N-CH 20V 16A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta) | 2.8V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 62 nC @ 5 V | ±12V | 3640 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7450PBFMOSFET N-CH 200V 2.5A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.5A (Ta) | 10V | 170mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7460PBFMOSFET N-CH 20V 12A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 12A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 2050 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7322D1PBFMOSFET P-CH 20V 5.3A 8SO Infineon Technologies |
0 | - |
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规格书 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | 2.7V, 4.5V | 62mOhm @ 2.9A, 4.5V | 700mV @ 250µA (Min) | 29 nC @ 4.5 V | ±12V | 780 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7342D2PBFMOSFET P-CH 55V 3.4A 8SO Infineon Technologies |
0 | - |
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规格书 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 3.4A (Ta) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38 nC @ 10 V | ±20V | 690 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRFP4232PBFMOSFET N-CH 250V 60A TO247AC Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 60A (Tc) | 10V | 35.7mOhm @ 42A, 10V | 5V @ 250µA | 240 nC @ 10 V | ±20V | 7290 pF @ 25 V | - | 430W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IRF7495PBFMOSFET N-CH 100V 7.3A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.3A (Ta) | 10V | 22mOhm @ 4.4A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 1530 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRFS4610PBFMOSFET N-CH 100V 73A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140 nC @ 10 V | ±20V | 3550 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFSL4610PBFMOSFET N-CH 100V 73A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140 nC @ 10 V | ±20V | 3550 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
