上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7353D1TRMOSFET N-CH 30V 6.5A 8SO Infineon Technologies |
0 | - |
|
规格书 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 32mOhm @ 5.8A, 10V | 1V @ 250µA | 33 nC @ 10 V | ±20V | 650 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7455MOSFET N-CH 30V 15A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 2.8V, 10V | 7.5mOhm @ 15A, 10V | 2V @ 250µA | 56 nC @ 5 V | ±12V | 3480 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF7603TRMOSFET N-CH 30V 5.6A MICRO8 Infineon Technologies |
0 | - |
|
规格书 |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Ta) | - | 35mOhm @ 3.7A, 10V | 1V @ 250µA | 27 nC @ 10 V | - | 520 pF @ 25 V | - | - | - | - | - | Surface Mount | Micro8™ |
|
|
IRF7604TRMOSFET P-CH 20V 3.6A MICRO8 Infineon Technologies |
0 | - |
|
规格书 |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | - | 90mOhm @ 2.4A, 4.5V | 700mV @ 250µA (Min) | 20 nC @ 4.5 V | - | 590 pF @ 15 V | - | - | - | - | - | Surface Mount | Micro8™ |
|
IRF7663TRMOSFET P-CH 20V 8.2A MICRO8 Infineon Technologies |
0 | - |
|
规格书 |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 8.2A (Ta) | - | 20mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45 nC @ 5 V | - | 2520 pF @ 10 V | - | - | - | - | - | Surface Mount | Micro8™ |
|
|
IRF7807D1MOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
0 | - |
|
规格书 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Tc) | - | - | - | Surface Mount | 8-SO |
|
|
IRF7811AMOSFET N-CH 28V 11A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 11A (Ta) | 4.5V | 10mOhm @ 11A, 10V | 3V @ 250µA | 26 nC @ 4.5 V | ±12V | 1760 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7811ATRMOSFET N-CH 28V 11A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 11A (Ta) | 4.5V | 10mOhm @ 11A, 10V | 3V @ 250µA | 26 nC @ 4.5 V | ±12V | 1760 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRFR3303TRMOSFET N-CH 30V 33A DPAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
;;3.jpg)
|
IRFU9120NMOSFET P-CH 100V 6.6A IPAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
