上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFL4310TRMOSFET N-CH 100V 1.6A SOT223 Infineon Technologies |
0 | - |
|
规格书 |
- | TO-261-4, TO-261AA | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.6A (Ta) | - | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | - | 330 pF @ 25 V | - | - | - | - | - | Surface Mount | SOT-223 |
|
IRFP054NMOSFET N-CH 55V 81A TO247AC Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 81A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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GS-065-030-6-LT-MRGS-065-030-6-LT-MR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IGT60R042D1ATMA1GAN HV Infineon Technologies |
0 | - |
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- |
CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Last Time Buy | - | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 |
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IGOT60R042D1AUMA2GANFET N-CH Infineon Technologies |
0 | - |
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- |
- | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-DSO-20-87 |
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IGO60R042D1AUMA2GAN HV Infineon Technologies |
0 | - |
|
- |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Last Time Buy | - | GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-DSO-20-85 |
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IRLL2705TRMOSFET N-CH 55V 3.8A SOT223 Infineon Technologies |
0 | - |
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规格书 |
- | TO-261-4, TO-261AA | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.8A (Ta) | - | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48 nC @ 10 V | - | 870 pF @ 25 V | - | - | - | - | - | Surface Mount | SOT-223 |
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GS66508T-MRGS66508T-MR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 5.8 nC @ 6 V | +7V, -10V | 260 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GS66508B-TRGS66508B-TR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 6.1 nC @ 6 V | +7V, -10V | 242 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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GS66508T-TRGS66508T-TR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 5.8 nC @ 6 V | +7V, -10V | 260 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
