上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GS-065-060-5-T-A-TRGS-065-060-5-T-A-TR Infineon Technologies Canada Inc. |
0 | - |
|
- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 2.6V @ 16.4mA | 14 nC @ 6 V | +7V, -10V | 516 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | - |
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|
GS-065-060-5-B-A-TRGS-065-060-5-B-A-TR Infineon Technologies Canada Inc. |
0 | - |
|
- |
- | 6-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 2.6V @ 16.4mA | 14 nC @ 6 V | +7V, -10V | 516 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | - |
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IMSQ120R012M2HHXUMA1SIC DISCRETE Infineon Technologies |
0 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AIMZHN120R010M1TXKSA1SIC_DISCRETE Infineon Technologies |
0 | - |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 202A (Tc) | 18V, 20V | 11.3mOhm @ 93A, 20V | 5.1V @ 30mA | 178 nC @ 20 V | +23V, -5V | 5703 pF @ 800 V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
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GS-065-060-5-B-A-MRGS-065-060-5-B-A-MR Infineon Technologies Canada Inc. |
0 | - |
|
- |
- | 6-SMD, No Lead | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 2.6V @ 16.4mA | 14 nC @ 6 V | +7V, -10V | 516 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | - |
|
|
GS-065-060-5-T-A-MRGS-065-060-5-T-A-MR Infineon Technologies Canada Inc. |
0 | - |
|
- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 2.6V @ 16.4mA | 14 nC @ 6 V | +7V, -10V | 516 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | - |
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F3L100R07W1H5FB67BPSA1EASY STANDARD Infineon Technologies |
0 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DF225R07W2S5PB97BPSA1EASY STANDARD Infineon Technologies |
0 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
F433MR12W1M1HPB76BPSA1EASY STANDARD Infineon Technologies |
0 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFM460MOSFET N-CH 500V 19A TO254AA Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-254-3, TO-254AA (Straight Leads) | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 190 nC @ 10 V | ±20V | 4300 pF @ 25 V | - | 250W (Tc) | - | - | - | Through Hole | TO-254AA |
