上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFL4315MOSFET N-CH 150V 2.6A SOT223 Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 2.6A (Ta) | 10V | 185mOhm @ 1.6A, 10V | 5V @ 250µA | 19 nC @ 10 V | ±30V | 420 pF @ 25 V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
AUIRG4PH50SXKMA1DISCRETE SWITCHES Infineon Technologies |
0 | - |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFP4368PBFMOSFET N-CH 75V 195A TO247AC Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-247-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 10V | 1.85mOhm @ 195A, 10V | 4V @ 250µA | 570 nC @ 10 V | ±20V | 19230 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
IPB65R110CFDATMA1MOSFET N-CH 650V 31.2A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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AUIRFS8409TRLMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
5 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRLML6401TRMOSFET P-CH 12V 4.3A SOT-23 Infineon Technologies |
0 | - |
|
规格书 |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 4.3A (Ta) | 2.5V, 4.5V | 50mOhm @ 4.3A, 4.5V | 950mV @ 250µA | 15 nC @ 5 V | ±8V | 830 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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IPT65R105G7XTMA1MOSFET N-CH 650V 24A 8HSOF Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ C7 | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 105mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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GS-065-030-LL-MRGS-065-030-LL-MR Infineon Technologies Canada Inc. |
0 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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GS-065-030-6-LT-TRGS-065-030-6-LT-TR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPW47N60CFDFKSA1MOSFET N-CH 600V 46A TO247-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 83mOhm @ 29A, 10V | 5V @ 2.9mA | 322 nC @ 10 V | ±20V | 7700 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
