上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AIMZHN120R160M1TXKSA1SIC_DISCRETE Infineon Technologies |
0 | - |
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规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | 5.1V @ 1.5mA | 14 nC @ 20 V | +23V, -5V | 350 pF @ 800 V | - | 109W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
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IPC302N20NFDX1SA1MOSFET N-CH 200V 1A SAWN ON FOIL Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | Die | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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GS61008P-TRGS61008P-TR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | 5-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | 2.6V @ 7mA | 8 nC @ 6 V | +7V, -10V | 600 pF @ 50 V | - | - | -55°C ~ 150°C | - | - | Surface Mount | - |
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AUIRF6215STRLMOSFET P-CH 150V 13A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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GS61008T-TRGS61008T-TR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | 1.3V @ 7mA | 12 nC @ 6 V | +7V, -10V | 590 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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IRLH5036TR2PBFMOSFET N-CH 60V 100A 5X6 PQFN Infineon Technologies |
0 | - |
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规格书 |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta), 100A (Tc) | - | 4.4mOhm @ 50A, 10V | 2.5V @ 150µA | 90 nC @ 10 V | - | 5360 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IPF010N04NF2SATMA1TRENCH <= 40V Infineon Technologies |
0 | - |
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规格书 |
StrongIRFET™2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 289A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 3.4V @ 189µA | 239 nC @ 10 V | ±20V | 11300 pF @ 20 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-U02 |
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IRF7494TRMOSFET N-CH 150V 5.2A 8-SOIC Infineon Technologies |
0 | - |
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规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 5.2A (Ta) | - | 44mOhm @ 3.1A, 10V | 4V @ 250µA | 54 nC @ 10 V | - | 1750 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-SO |
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GS-065-018-2-L-TRGS-065-018-2-L-TR Infineon Technologies Canada Inc. |
0 | - |
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- |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 18A (Tc) | 6V | 110mOhm @ 5.5A, 6V | 2.6V @ 4.8mA | 4 nC @ 6 V | +7V, -10V | 132 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
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IRF3515STRLPBFMOSFET N-CH 150V 41A D2PAK Infineon Technologies |
0 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 41A (Tc) | - | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107 nC @ 10 V | - | 2260 pF @ 25 V | - | - | - | - | - | Surface Mount | D2PAK |
