制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IRF60DM206ATMA1FET N-CHANNEL Infineon Technologies |
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DirectFET® | DirectFET™ Isometric ME | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 130A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.7V @ 150µA | 200 nC @ 10 V | ±20V | 6530 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric ME |
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AIMBG120R120M1XTMA1SIC_DISCRETE Infineon Technologies |
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* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BSC010N04LSTATMA1MOSFET N-CH 40V 39A/100A TDSON Infineon Technologies |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 50A, 10V | 2V @ 250µA | 133 nC @ 10 V | ±20V | 9520 pF @ 20 V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
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IPC302N20N3X1SA1MOSFET N-CH 200V 1A SAWN ON FOIL Infineon Technologies |
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OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 260µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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IRFBA1404PMOSFET N-CH 40V 206A SUPER-220 Infineon Technologies |
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HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 206A (Tc) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
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IRF6646TR1PBFMOSFET N-CH 80V 12A DIRECTFET Infineon Technologies |
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HEXFET® | DirectFET™ Isometric MN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 12A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 12A, 10V | 4.9V @ 150µA | 50 nC @ 10 V | ±20V | 2060 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MN |
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IRL60S216MOSFET N-CH 60V 195A D2PAK Infineon Technologies |
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HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 1.95mOhm @ 100A, 10V | 2.4V @ 250µA | 255 nC @ 4.5 V | ±20V | 15330 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF100P218XKMA1MOSFET N-CH 100V 209A TO247AC Infineon Technologies |
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StrongIRFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 209A (Tc) | 6V, 10V | 1.28mOhm @ 100A, 10V | 3.8V @ 278µA | 555 nC @ 10 V | ±20V | 25000 pF @ 50 V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IRLL024ZMOSFET N-CH 55V 5A SOT223 Infineon Technologies |
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HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 5A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11 nC @ 5 V | ±16V | 380 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IPA030N10N3GXKSA1MOSFET N-CH 100V 79A TO220-FP Infineon Technologies |
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OptiMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 79A (Tc) | 6V, 10V | 3mOhm @ 79A, 10V | 3.5V @ 270µA | 206 nC @ 10 V | ±20V | 14800 pF @ 50 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |