上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6644TR1PBFMOSFET N-CH 100V 10.3A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MN |
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AUIRFS4310TRLMOSFET N-CH 100V 75A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPB65R190CFDATMA1MOSFET N-CH 650V 17.5A D2PAK Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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AUIRFS3004TRLMOSFET N-CH 40V 195A D2PAK-3 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRL1404STRLPBFMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140 nC @ 5 V | ±20V | 6600 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPLU250N04S41R7XTMA1MOSFET N-CH 40V 250A 8HSOF Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 250A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 80µA | 100 nC @ 10 V | ±20V | 7900 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-8-1 |
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BTS282ZE3180AATMA2MOSFET N-CH 49V 80A TO263-7 Infineon Technologies |
0 | - |
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规格书 |
TEMPFET® | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 49 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | ±20V | 4800 pF @ 25 V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-1 |
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AUIRFS4115TRLMOSFET N-CH 150V 99A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 150 V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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SPB11N60S5ATMA1MOSFET N-CH 600V 11A TO263-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPB80N10L GMOSFET N-CH 100V 80A TO263-3 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
