制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IRFH6200TR2PBFMOSFET N-CH 20V 100A 5X6 PQFN Infineon Technologies |
0 | - |
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![]() 规格书 |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 49A (Ta), 100A (Tc) | - | 0.95mOhm @ 50A, 10V | 1.1V @ 150µA | 230 nC @ 4.5 V | - | 10890 pF @ 10 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IPB80P03P4L07ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRF3805L-7PPBFMOSFET N-CH 55V 160A D2PAK Infineon Technologies |
0 | - |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7820 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRFH5110TR2PBFMOSFET N-CH 100V 5X6 PQFN Infineon Technologies |
0 | - |
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- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 63A (Tc) | - | 12.4mOhm @ 37A, 10V | 4V @ 100µA | 72 nC @ 10 V | - | 3152 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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AUIRF3205ZSTRLMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
0 | - |
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![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPL60R255P6AUMA1MOSFET N-CH 600V 15.9A 4VSON Infineon Technologies |
0 | - |
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CoolMOS™ P6 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.9A (Tc) | 10V | 255mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 126W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IPD90P04P405ATMA1MOSFET P-CH 40V 90A TO252-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4.7mOhm @ 90A, 10V | 4V @ 250µA | 154 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
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IPB60R190P6ATMA1MOSFET N-CH 600V 20.2A D2PAK Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ P6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37 nC @ 10 V | ±20V | 1750 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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BTS113ANKSA1MOSFET N-CH 60V 11.5A TO220AB Infineon Technologies |
0 | - |
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TEMPFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11.5A (Tc) | 4.5V | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | ±10V | 560 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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BTS113AE3064NKSA1MOSFET N-CH 60V 11.5A TO220AB Infineon Technologies |
0 | - |
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TEMPFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11.5A (Tc) | 4.5V | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | ±10V | 560 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |