上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF6645TR1PBFMOSFET N-CH 100V 5.7A DIRECTFET Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | DirectFET™ Isometric SJ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.7A (Ta), 25A (Tc) | 10V | 35mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20 nC @ 10 V | ±20V | 890 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SJ |
|
|
IRF6674TR1PBFMOSFET N-CH 60V 13.4A DIRECTFET Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | DirectFET™ Isometric MZ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13.4A (Ta), 67A (Tc) | 10V | 11mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 3.6W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MZ |
|
IPD110N12N3GBUMA1MOSFET N-CH 120V 75A TO252-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 75A (Tc) | 10V | 11mOhm @ 75A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4310 pF @ 60 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
GS-065-014-6-LR-TRGS-065-014-6-LR-TR Infineon Technologies Canada Inc. |
0 | - |
|
- |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 15.2A (Tc) | 6V | 138mOhm @ 4A, 6V | 2.6V @ 3mA | 2.7 nC @ 6 V | +7V, -10V | 85 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
|
IRL3502SMOSFET N-CH 20V 110A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | 700mV @ 250µA (Min) | 110 nC @ 4.5 V | ±10V | 4700 pF @ 15 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IPB023N04NF2SATMA1TRENCH <= 40V Infineon Technologies |
0 | - |
|
规格书 |
StrongIRFET™2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Ta), 122A (Tc) | 6V, 10V | 2.35mOhm @ 70A, 10V | 3.4V @ 81µA | 102 nC @ 10 V | ±20V | 4800 pF @ 20 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
SI4420DYMOSFET N-CH 30V 12.5A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78 nC @ 10 V | ±20V | 2240 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRFZ44ZSTRRPBFMOSFET N-CH 55V 51A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
AUIRFS3206TRLMOSFET N-CH 60V 210A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6540 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
.jpg)
|
BTS247ZE3062AATMA2MOSFET N-CH 55V 33A TO263-5 Infineon Technologies |
0 | - |
|
规格书 |
TEMPFET® | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 33A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2V @ 90µA | 90 nC @ 10 V | ±20V | 1730 pF @ 25 V | Temperature Sensing Diode | 120W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-5-2 |
